Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FQS4410 | Single N-Channel, Logic Level, Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 598 K |
IRFS440B | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 687 K |
TMS44400-60DGB | 1048576 by 4-bit dynamic random-access memory, 60ns | Texas-Instruments | SOP | 20 | 0°C | 70°C | 1 M |
TMS44400-70DGB | 1048576 by 4-bit dynamic random-access memory, 70ns | Texas-Instruments | SOP | 20 | 0°C | 70°C | 1 M |
TMS44400-80DGB | 1048576 by 4-bit dynamic random-access memory, 80ns | Texas-Instruments | SOP | 20 | 0°C | 70°C | 1 M |
TMS44400P-60DGB | 1048576 by 4-bit dynamic random-access memory, 60ns | Texas-Instruments | SOP | 20 | 0°C | 70°C | 1 M |
TMS44400P-60DGB | 1048576 by 4-bit dynamic random-access memory, 60ns | Texas-Instruments | SOP | 20 | 0°C | 70°C | 1 M |
TMS44400P-70DGB | 1048576 by 4-bit dynamic random-access memory, 70ns | Texas-Instruments | SOP | 20 | 0°C | 70°C | 1 M |
TMS44400P-80DGB | 1048576 by 4-bit dynamic random-access memory, 80ns | Texas-Instruments | SOP | 20 | 0°C | 70°C | 1 M |
TMS44400P-80DGB | 1048576 by 4-bit dynamic random-access memory, 80ns | Texas-Instruments | SOP | 20 | 0°C | 70°C | 1 M |
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