| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FM93CS46N | 1K BIT SERIAL EEPROM | Fairchild-Semiconductor | - | - | - | - | 172 K |
| TMS46400DGA-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, low power | Texas-Instruments | TSOP | 20 | 0°C | 70°C | 657 K |
| TMS46400DGA-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low power | Texas-Instruments | TSOP | 20 | 0°C | 70°C | 657 K |
| TMS46400DGA-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low power | Texas-Instruments | TSOP | 20 | 0°C | 70°C | 657 K |
| TMS46400PDGA-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 3.3V, self-refresh | Texas-Instruments | TSOP | 20 | 0°C | 70°C | 657 K |
| TMS46400PDGA-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, self-refresh | Texas-Instruments | TSOP | 20 | 0°C | 70°C | 657 K |
| TMS46400PDGA-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, self-refresh | Texas-Instruments | TSOP | 20 | 0°C | 70°C | 657 K |
| TMS46400PDJ-60 | 1048576-word by 4-bit dynamic random-access memories, 60 ns, 3.3V, self-refresh | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| VDS4616A4A-6 | 166 Mhz LVTTL synchronous DRAM, 512 K x 16 bit x 2 banks | distributor | TSOP | 50 | 0°C | 70°C | 542 K |
| VDS4616A4A-7 | 143 Mhz LVTTL synchronous DRAM, 512 K x 16 bit x 2 banks | distributor | TSOP | 50 | 0°C | 70°C | 542 K |
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