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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
23S560Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1kHz, 100mV AC) 56uHdistributor---40°C85°C51 K
74ALS563AD5.5 V, latch/flip-flopPhilips-SemiconductorsSOL200°C70°C106 K
74ALS564AD5.5 V, latch/flip-flopPhilips-SemiconductorsSOL200°C70°C106 K
74ALS564AN5.5 V, latch/flip-flopPhilips-SemiconductorsDIP200°C70°C106 K
GNR34S561KVaristor. Max allowable voltage: ACrms=350V, DC=460V. Varistor voltage 504-616V.distributor-2-40°C85°C68 K
K4S560832C-TC/L7C8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHzSamsung-ElectronicTSOP540°C70°C113 K
M2S56D30AKT-10L265M double data rate SDRAM, 32M x 8 organization, 10ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupsTSOP640°C70°C768 K
M93S56-R4KBIT, 2KBIT AND 1KBIT (X16) SERIAL MICROWIRE BUS EEPROM WITH BLOCK PROTECTIONSGS-Thomson-Microelectronics----211 K
MDE-25S561K560V; max peak current:20000A; metal oxide varistor. Standard S series 25mm discdistributor-2--87 K
MDE-34S561K560V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single squaredistributor-2--88 K
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