| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BAS70-04 | Silicon planar dual schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 52 K |
| BAS70-04 | Silicon planar dual schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 52 K |
| BAS70-05 | Silicon planar dual schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 52 K |
| BAS70-05 | Silicon planar dual schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 52 K |
| BAS70-06 | Silicon planar dual schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 52 K |
| BAS70-06 | Silicon planar dual schottky barrier diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 52 K |
| CES7002A | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 473 K |
| FS70KM-2 | 70A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -55°C | 150°C | 41 K |
| FS70SM-2 | 70A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 40 K |
| FS70UM-2 | 70A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 39 K |
| FS70VS-2 | 70A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
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