| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 143 K |
| HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 204 K |
| HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 163 K |
| SSS7N60A | N-channel power MOSFET, 600V, 4A | Samsung-Electronic | - | 3 | -55°C | 150°C | 320 K |
| STS7NF60L | N-CHANNEL 60V - 0.017 OHM - 7.5A SO-8 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 282 K |
| VNS7NV04 | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 488 K |
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