| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BS817 | 200V; P-channel enchancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 58 K |
| GS8170LW18C-250 | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-250I | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-300I | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW18C-333 | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW36C-300 | 300MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW36C-333 | 333MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| HS817 | 5 V, +/-25 ppm, ECL crystal clock oscillator | distributor | SMD | 14 | 0°C | 70°C | 257 K |
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