| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1680 | Silicon PNP transistor for power amplifier and power switching applications | Toshiba | - | 3 | -55°C | 150°C | 165 K |
| 2SA1887 | Silicon PNP transistor for high current switching applications | Toshiba | - | 3 | -55°C | 150°C | 82 K |
| 2SA1891 | Silicon PNP transistor for power amplifier and power switching applications | Toshiba | - | 3 | -55°C | 150°C | 100 K |
| 2SA1892 | Silicon PNP transistor for power amplifier and power switching applications | Toshiba | - | 3 | -55°C | 150°C | 210 K |
| MPSA14 | NPN Darlington transistor | Philips-Semiconductors | SOT54 | - | - | - | 43 K |
| SA1458D | General purpose operational amplifier | Philips-Semiconductors | SOT96 | - | - | - | 100 K |
| SA1458D | General purpose operational amplifier | Philips-Semiconductors | SOT96 | - | - | - | 100 K |
| SA1458N | General purpose operational amplifier | Philips-Semiconductors | SOT97 | - | - | - | 100 K |
| SA1620BE | Low voltage GSM front-end transceiver | Philips-Semiconductors | SOT313 | - | - | - | 203 K |
| SA1620BE | Low voltage GSM front-end transceiver | Philips-Semiconductors | SOT313 | - | - | - | 203 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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