| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BL-HSA33-2 | Super red, 30 mA, standard chip LED lamp | distributor | Standard | 2 | -25°C | 80°C | 116 K |
| BL-HSA36-2 | Super red, 30 mA, standard chip LED lamp | distributor | Standard | 2 | -25°C | 80°C | 116 K |
| KSA3010 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 75 K |
| SA30A | 30.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA33 | 33.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA33A | 33.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA36 | 36.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA3600 | 2.45 GHz, low voltage dual-band RF front-end | Philips-Semiconductors | TSSOP | 24 | -40°C | 85°C | 184 K |
| SA3600 | Low voltage dual-band RF front-end | Philips-Semiconductors | - | 24 | -40°C | 85°C | 140 K |
| SA36A | 36.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
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