| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KSA916 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 65 K |
| KSA931 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 41 K |
| KSA940 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 59 K |
| MPSA92 | High Voltage Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 72 K |
| MPSA93 | High Voltage Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 72 K |
| SA9025 | 900 MHz transmit modulator and 2.2 GHz fractional-N synthesizer | Philips-Semiconductors | LQFP | 48 | -40°C | 85°C | 151 K |
| SA90A | 90.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 601 K |
| SA910 | Variable gain RF predriver amplifier | Philips-Semiconductors | SSOP | 20 | -40°C | 85°C | 114 K |
| SA9500DH | Dual-band, CDMA/AMPS downconverter IC | Philips-Semiconductors | TSSOP | 20 | -30°C | 85°C | 150 K |
| SA9503 | Dual-band, CDMA/AMPS LNA and downconverter mixer | Philips-Semiconductors | HBCC | 32 | -40°C | 85°C | 126 K |
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