| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1PS79SB30 | 40 V, 200 mA schottky barrier diode | Philips-Semiconductors | SOD | 2 | -65°C | 150°C | 53 K |
| QSB320 | SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR | Fairchild-Semiconductor | - | - | - | - | 50 K |
| QSB320F | SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR | Fairchild-Semiconductor | - | - | - | - | 50 K |
| QSB363 | SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR | Fairchild-Semiconductor | - | - | - | - | 129 K |
| QSB363C | SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR | Fairchild-Semiconductor | - | - | - | - | 106 K |
| SB320 | 20 V, 3 A,schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 154 K |
| SB3508 | 800 V, 35.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 205 K |
| SB3508W | 800 V, 35.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 205 K |
| SB3510 | 1000 V, 35.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 205 K |
| SB3510W | 1000 V, 35.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 205 K |
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