| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KSB810 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 36 K |
| SB8100 | 100 V, 8 A,schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 146 K |
| SB8100 | 100 V, 8 A, schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 146 K |
| SB8100D | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 100degC 8 A. | distributor | - | 4 | -50°C | 150°C | 56 K |
| SB8100D | 100 V, 8 A, D2PAK surface mount schottky barrier rectifier | distributor | D2PAK | 4 | -50°C | 150°C | 146 K |
| SB8100D | 100 V, 8 A, D2PAK surface mount schottky barrier rectifier | distributor | TO | 3 | -50°C | 150°C | 146 K |
| SB8100DC | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Ta = 100degC 8 A. | distributor | - | 4 | -50°C | 150°C | 46 K |
| SB8100F | 100 V, 8 A,isolation schottky barrier rectifier | distributor | - | 2 | -50°C | 150°C | 147 K |
| SB8100F | 100 V, 8 A, isolation schottky barrier rectifier | distributor | - | 2 | -50°C | 150°C | 147 K |
| SB8100FCT | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 100degC 8 A. | distributor | - | 3 | -50°C | 125°C | 42 K |
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