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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SC2001Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 700mA.distributor-30°C150°C45 K
2SC2021NPN transistor for general small signal amplifier, 40V 0.1AROHMFTR3-55°C125°C309 K
2SC2056NPN epitaxial planar typeMitsubishi-Electric-Corporation-Semiconductor-Group-3--179 K
2SC2063NPN transistor for RF amplifier, 25V 50mAROHMFTR3-55°C125°C309 K
2SC2086NPN epitaxial planar typeMitsubishi-Electric-Corporation-Semiconductor-Group-3--126 K
2SC2094NPN epitaxial planar typeMitsubishi-Electric-Corporation-Semiconductor-Group-5--149 K
2SC2097NPN epitaxial planar typeMitsubishi-Electric-Corporation-Semiconductor-Group-5--134 K
SC20005 V, universal timeslot interchangePhilips-SemiconductorsPLCC680°C70°C221 K
SC2092-400-15400 V, 2 A, silicon controlled rectifierdistributor-3-40°C110°C507 K
SC2092-600-15600 V, 2 A, silicon controlled rectifierdistributor-3-40°C110°C507 K
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