Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SC3355 | NPN transistor for low noise amplifier at VHF, UHF and CATV band. | NEC-Electronics-Inc- | - | 3 | -65°C | 150°C | 90 K |
2SC3356 | NPN transistor for low noise amplifier at VHF, UHF and CATV band | NEC-Electronics-Inc- | - | 3 | -65°C | 150°C | 91 K |
2SC3404 | NPN RF power transistor | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -55°C | 175°C | 150 K |
2SC3616 | NPN transistor for general-purpose applications requiring high DC current gain | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 168 K |
2SC3622 | NPN transistor for general-purpose applications requiring high DC current gain | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 163 K |
2SC388 | Transistor. TV final picture IF amplifier applications . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 300mW. Collector current Ic = 50mA. | distributor | - | 3 | 0°C | 150°C | 82 K |
HSC3417 | Emitter to base voltage:5V 100mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 34 K |
HSC3953 | Emitter to base voltage:3V 200mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 33 K |
HSC3953S | Emitter to base voltage:3V 200mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 35 K |
MSC3130T1 | 15 V, NPN RF amplifier transistor surface mount | distributor | - | 3 | - | - | 40 K |
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