| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC3218-M | NPN power transistor for 860-MHz wideband power amplifier, 55V, 15A | NEC-Electronics-Inc- | - | 5 | -65°C | 150°C | 121 K |
| 2SC380TM | NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC380TM-O
| NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC380TM-R
| NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC380TM-Y | NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | Toshiba | - | | - | - | 338 K |
| 2SC3838K | High-frequency amplifier transistor (11V, 50mA, 3.2GHz) | ROHM | SMT3 | 3 | -55°C | 150°C | 64 K |
| KSC3953 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 51 K |
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