| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KSE700 | PNP Epitaxial Silicon Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
| KSE700 | PNP Epitaxial Silicon Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
| KSE701 | PNP Epitaxial Silicon Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
| KSE702 | PNP Epitaxial Silicon Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
| KSE703 | PNP Epitaxial Silicon Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
| MXD1000SE75 | 5-tap silicon delay line | Maxim-Integrated-Producs | Narrow SO | 16 | -40°C | 85°C | 72 K |
| MXD1005SE75 | 5-tap silicon delay line | Maxim-Integrated-Producs | Narrow SO | 16 | -40°C | 85°C | 89 K |
| QSE773 | PLASTIC SILICON PIN PHOTODIODE | Fairchild-Semiconductor | - | - | - | - | 95 K |
| QSE773 | PLASTIC SILICON PIN PHOTODIODE | Fairchild-Semiconductor | - | - | - | - | 95 K |
| QSE773 | Plastic Silicon Pin Photodiode. | distributor | - | - | - | - | 65 K |
| SE701 | 45 Watt, silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
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