Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1MBI150SH-140 | IGBT module | distributor | - | 5 | - | - | 168 K |
CMDSH-3 | 30 V, super-mini schottky diode | distributor | SOD | 2 | -65°C | 150°C | 77 K |
CMFSH-3I | 30 V, dual isolated schottky diode | distributor | SOT | 4 | -65°C | 150°C | 87 K |
CMKSH-3DO | 30 V, dual opposing high schottky diode | distributor | SOT | 6 | -65°C | 150°C | 112 K |
CMPSH-3 | 30 V, schottky diode | distributor | - | 3 | -65°C | 150°C | 79 K |
FS10ASH-06 | 10A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
FS30ASH-06 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
FS5ASH-06 | 5A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
FS5VSH-3 | 5A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 39 K |
FS70VSH-03 | 70A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 39 K |
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