| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C64ASI-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | distributor | SOIC | 28 | -40°C | 85°C | 42 K |
| 28C64ASI-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | SOIC | 28 | -40°C | 85°C | 42 K |
| 28C64ASI-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | -40°C | 85°C | 42 K |
| 28LV256SI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | SOIC | 28 | -40°C | 85°C | 41 K |
| 28LV256SI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | -40°C | 85°C | 41 K |
| 28LV256SI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | SOIC | 28 | -40°C | 85°C | 41 K |
| 28LV256SI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | SOIC | 28 | -40°C | 85°C | 41 K |
| 28LV64SI-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | SOIC | 28 | -40°C | 85°C | 42 K |
| 28LV64SI-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | -40°C | 85°C | 42 K |
| 28LV64SI-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | distributor | SOIC | 28 | -40°C | 85°C | 42 K |
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