| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FS10ASJ-03 | 10A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
| FS30ASJ-03 | 10A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
| FS30VSJ-03 | 30A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
| FS50ASJ-03 | 50A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 38 K |
| HYB3116160BSJ-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB3116160BSJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB3116160BSJ-70 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB3117800BSJ-70 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 260 K |
| HYB3118160BSJ-70 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 258 K |
| HYB3118165BSJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 192 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
|---|
