| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ0163 | Silicon P-Channel Junction FET | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
| 2SJ0164 | Silicon P-Channel Junction FET | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
| 2SJ0364 | Silicon P-Channel Junction FET | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
| 2SJ0536 | Silicon P-Channel MOS FET | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
| FSJ055R | 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 325 K |
| PM100CSJ060 | 100 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 71 K |
| PM10CSJ060 | 10 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 23 | -20°C | 150°C | 57 K |
| PM15CSJ060 | 15 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 23 | -20°C | 150°C | 56 K |
| PM20CSJ060 | 20 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 23 | -20°C | 150°C | 57 K |
| PM30CSJ060 | 30 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 23 | -20°C | 150°C | 56 K |
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