| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ187 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2062 | 3 | - | - | 85 K |
| 2SJ188 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2092A | 3 | - | - | 79 K |
| 2SJ189 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2092A | 3 | - | - | 81 K |
| 2SJ190 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2062 | 3 | - | - | 83 K |
| 2SJ191 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2092A | 3 | - | - | 80 K |
| 2SJ192 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2092A | 3 | - | - | 80 K |
| 2SJ193 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2062 | 3 | - | - | 82 K |
| FSJ160R | 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 60 K |
| FSJ163D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| FSJ163R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 56 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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