| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ201 | Silicon P channel field effect transistor for high power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 182 K |
| 2SJ217 | Power switching MOSFET | distributor | - | - | - | - | 49 K |
| 2SJ221 | Power switching MOSFET | distributor | - | - | - | - | 48 K |
| 2SJ222 | Power switching MOSFET | distributor | - | - | - | - | 34 K |
| 2SJ244 | Power switching MOSFET | distributor | UPAK | - | - | - | 45 K |
| 2SJ247 | Power switching MOSFET | distributor | - | - | - | - | 47 K |
| 2SJ248 | Power switching MOSFET | distributor | - | - | - | - | 33 K |
| 2SJ278 | Power switching MOSFET | distributor | UPAK | - | - | - | 42 K |
| FSJ260R | 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
| FSJ264D | 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 48 K |
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