| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK1062 | Silicon N channel field effect transistor for high speed switching applications, analog switch applications and interface applications | Toshiba | - | 3 | -55°C | 150°C | 192 K |
| 2SK1382 | Silicon N channel field effect transistor for high speed switching applications, relay drive and motor drive applications, DC-DC converter applications | Toshiba | - | 3 | -55°C | 150°C | 263 K |
| 2SK1486 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Toshiba | - | 3 | -55°C | 150°C | 257 K |
| 2SK1489 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator applications | Toshiba | - | 3 | -55°C | 150°C | 255 K |
| 2SK1489 | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator applications | Toshiba | - | 3 | -55°C | 150°C | 255 K |
| 3SK153 | Silicon N channel field effect transistor for TV tuner, UHF RF amplifier applications and TV tuner, VHF wide band RF amplifier applications | Toshiba | - | 4 | -55°C | 125°C | 212 K |
| 3SK153 | Silicon N channel field effect transistor for TV tuner, UHF RF amplifier applications and TV tuner, VHF wide band RF amplifier applications | Toshiba | - | 4 | -55°C | 125°C | 212 K |
| 3SK195 | Silicon N channel field effect transistor for TV tuner, VHF RF amplifier applications and FM tuner applications | Toshiba | - | 4 | -55°C | 125°C | 223 K |
| HSK120 | High frequency small signal diode | distributor | LLD | - | - | - | 26 K |
| HSK122 | High frequency small signal diode | distributor | LLD | - | - | - | 27 K |
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