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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SK1065N-channel junction silicon FET, high-frequency general-purpose amp applicationSANYO-Electric-Co--Ltd-20573--107 K
2SK1215Small signal high frequency amplifier field effect (FET) transistordistributorCMPAK---23 K
2SK133Silicon N-channel MOSFET low frequency power amplifier (-120V drain-source breakdown voltage)distributor-3-55°C150°C105 K
2SK134Silicon N-channel MOSFET low frequency power amplifier (-140V drain-source breakdown voltage)distributor-3-55°C150°C105 K
2SK135Silicon N-channel MOSFET low frequency power amplifier (-160V drain-source breakdown voltage)distributor-3-55°C150°C105 K
2SK168Small signal high frequency amplifier field effect (FET) transistordistributor----42 K
3SK165AGaAs N-channel Dual Gate MES FETSony-Semiconductor----59 K
3SK166AGaAs N-channel Dual Gate MES FETSony-Semiconductor----72 K
3SK186Small signal high frequency amplifier field effect (FET) transistordistributor----31 K
3SK194Small signal high frequency amplifier field effect (FET) transistordistributor----37 K
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