| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK1906 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063 | 3 | - | - | 84 K |
| 2SK1954 | N-channel power MOSFET switching use, industrial use | NEC-Electronics-Inc- | - | - | - | - | 411 K |
| 2SK1954-Z | N-channel power MOSFET switching use, industrial use | NEC-Electronics-Inc- | - | - | - | - | 411 K |
| 2SK1958-T1 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Ultra Super Min | - | - | - | 60 K |
| 2SK1958-T2 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Ultra Super Min | - | - | - | 60 K |
| 2SK1959 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Mini Mold | - | - | - | 59 K |
| 2SK1959 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Mini Mold | - | - | - | 59 K |
| 2SK1959-T1 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Mini Mold | - | - | - | 59 K |
| 2SK1959-T2 | N Channel enhancement MOS FET | NEC-Electronics-Inc- | 3pin Mini Mold | - | - | - | 59 K |
| 2SK1961 | N-channel junction silicon FET, high-frequency low-noise amp application | SANYO-Electric-Co--Ltd- | 2019A | 3 | - | - | 128 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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