| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK669 | N-channel MOS silicon FET, very high-speed switch application | SANYO-Electric-Co--Ltd- | 2040 | 3 | - | - | 58 K |
| 2SK679A | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
| 2SK679A-T | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
| 2SK679A-T/JD | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
| 2SK679A-T/JM | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
| 2SK679A/JD | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
| 2SK679A/JM | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 414 K |
| 2SK680A | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 317 K |
| 2SK681A | MOS type field effect transistor | NEC-Electronics-Inc- | - | - | - | - | 460 K |
| MSK600 | Wide bandwidth high voltage amplifier | distributor | - | 12 | -40°C | 85°C | 185 K |
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