Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1SS270 | High frequency small signal diode | distributor | MHD | - | - | - | 23 K |
1SS270A | High frequency small signal diode | distributor | MHD | - | - | - | 23 K |
1SS293 | Schottky barrier diode for low voltage high speed switching | Toshiba | - | 3 | -55°C | 125°C | 111 K |
1SS294 | Schottky barrier diode for low voltage high speed switching | Toshiba | - | 3 | -55°C | 125°C | 114 K |
1SS295 | Schottky barrier diode for UHF band mixer applications | Toshiba | - | 3 | -55°C | 125°C | 109 K |
FSS230D | 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
FSS230R | 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
FSS234D | 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
FSS234R | 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
FSS23A4R | 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
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