Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1SS265 | 35 V, band switching diode | distributor | - | 2 | - | - | 82 K |
1SS270 | 30 V, switching diode | distributor | - | 2 | - | - | 82 K |
SS210 | 2.0A, 100V ultra fast recovery rectifier | distributor | HSMA | - | - | - | 625 K |
SS22 | 2.0A, 20V ultra fast recovery rectifier | distributor | HSMA | - | - | - | 625 K |
SS22A | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 2.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
SS23A | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 2.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
SS24A | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 2.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
SS25A | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 2.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
SS26A | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 60 V. Max average forward rectified current 2.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
SSS2N60B | 600V, 2A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 856 K |
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