Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BSS229 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 303 K |
SS22 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
SS22 | Surface Mount Schottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 85 K |
SS22 | 2.0A, 20V ultra fast recovery rectifier | distributor | HSMA | - | - | - | 625 K |
SS22 | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 2.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
SS22 | 20 V, 2.0 A surface mount schottky barrier rectifier | distributor | - | 2 | -65°C | 125°C | 51 K |
SS22 | 20 V, 2.0 A surface mount schottky barrier rectifier | distributor | - | 2 | -65°C | 125°C | 51 K |
SS22A | Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 2.0 A | distributor | - | 2 | -65°C | 150°C | 16 K |
YSS220-F | 5V; SP3: surround processor 3 | distributor | QFP | 64 | 0°C | 70°C | 776 K |
YSS222-D | KPB karaoke processor B | distributor | DIP | 16 | 0°C | 70°C | 411 K |
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