| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STD20N03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
| STD20N06 | TRANSISTOR MOSFET TO-252 | SGS-Thomson-Microelectronics | - | - | - | - | 174 K |
| STD20NF10 | N-CHANNEL 100V - 0.038 OHM - 30A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 303 K |
| STD25NF10 | N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 437 K |
| STD25NF10L | N-CHANNEL 100V - 0.030 OHM - 25A DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 451 K |
| STD2NA60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 172 K |
| STD2NB60 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 102 K |
| STD2NB60 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 102 K |
| STD2NB80 | N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
| STD2NC60 | N-CHANNEL 600V - 3.3 OHM - 2A - IPAK/DPAK POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
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