| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STP55NF03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 55 A Current Idm pulse 220 A Voltage Vgs th max. 2.5 V Pitch lead 2.54 mm Voltage Vds max 30 V Resistance Rds on 0.013 R | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| STP55NF06 | N-CHANNEL 60V - 0.017 OHM - 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 485 K |
| STP55NF06FP | N-CHANNEL 60V - 0.017 OHM - 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 485 K |
| STP55NF06L | N-CHANNEL 60V - 0.014 OHM - 55A T0-220/TO-22OFP/D2PAK/I2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 454 K |
| STP5NA80FP | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 50 K |
| STP5NA90 | Power dissipation 125 W Transistor polarity N Channel Current Id cont. 5 A Current Idm pulse 20 A Voltage Vgs th max. 3.75 V Voltage Vds max 900 V Resistance Rds on 2.5 R Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 359 K |
| STP5NA90FI | Power dissipation 60 W Transistor polarity N Channel Current Id cont. 3.5 A Voltage Vgs th max. 2 kV Voltage Vds max 900 V Resistance Rds on 2.5 R Temperature current 25 ?C Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 359 K |
| STP5NA90FI | Power dissipation 60 W Transistor polarity N Channel Current Id cont. 3.5 A Voltage Vgs th max. 2 kV Voltage Vds max 900 V Resistance Rds on 2.5 R Temperature current 25 ?C Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 359 K |
| STP5NB90 | N-CHANNEL 900V - 2.3 OHM - 5A - TO-220/TO-220FP | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
| STP5NB90FP | N-CHANNEL 900V - 2.3 OHM - 5A - TO-220/TO-220FP | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
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