| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC3114 | NPN epitaxial planar silicon transistor, high-V(ebo), AF amp application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 103 K |
| 2SC3121 | Silicon NPN transistor for TV tuner, UHF oscillator applications (common base) and TV tuner, UHF converters applications (common base) | Toshiba | - | 3 | -55°C | 125°C | 181 K |
| 2SC3122 | Silicon NPN transistor for TV VHF RF amplifier applications | Toshiba | - | 3 | -55°C | 125°C | 171 K |
| 2SC3123 | Silicon NPN transistor for TV VHF mixer applications | Toshiba | - | 3 | -55°C | 125°C | 216 K |
| 2SC3127 | Small signal high frequency amplifier transistor | distributor | MPAK | - | - | - | 45 K |
| 2SC3128 | Small signal high frequency amplifier transistor | distributor | - | - | - | - | 45 K |
| 2SC3134 | NPN epitaxial planar silicon transistor, for AF application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 106 K |
| 2SC3135 | NPN epitaxial planar silicon transistor, for AF application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 110 K |
| 2SC3143 | NPN epitaxial planar silicon transistor, high-voltage, AF power amp, 100W output predriver application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 103 K |
| MSC3130T1 | RF Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 105 K |
| 1 [2] [3] [4] [5] [6] [7] |
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