| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EN29F002T-45J | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | PLCC | 32 | 0°C | 70°C | 267 K |
| EN29F002T-45P | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | PDIP | 32 | 0°C | 70°C | 267 K |
| EN29F002T-45PI | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | PDIP | 32 | -40°C | 85°C | 267 K |
| EN29F002T-45T | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | TSOP | 32 | 0°C | 70°C | 267 K |
| KM416C1004CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C1204CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V1004CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V1204CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| V29C51000T-45P | 512Kbit (65,536 x 8bit) 5V CMOS flash memory | Mosel-Vitelic | PDIP | 32 | 0°C | 70°C | 75 K |
| V29C51000T-45T | 512Kbit (65,536 x 8bit) 5V CMOS flash memory | Mosel-Vitelic | TSOP | 32 | 0°C | 70°C | 75 K |
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