Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM416C1004BT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
KM416C1004CT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
KM416C1204BT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 2 M |
KM416C1204CT-45 | 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
UT28F256T-45PCC | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Mil temp. | distributor | DIP | 28 | -55°C | 125°C | 69 K |
UT28F256T-45PCC | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish gold. Mil temp. | distributor | DIP | 28 | -55°C | 125°C | 69 K |
UT28F256T-45PCX | Radiation-hardenet 32Kx8 PROM. 45ns acces time, TTL compatible inputs, CMOS/TTL compatible outputs. Lead finish optional. Mil temp. | distributor | DIP | 28 | -55°C | 125°C | 69 K |
V29C51000T-45J | 512Kbit (65,536 x 8bit) 5V CMOS flash memory | Mosel-Vitelic | PLCC | 32 | 0°C | 70°C | 75 K |
V29C51001T-45J | 1megabit (131,072 x 8bit) 5V CMOS flash memory | Mosel-Vitelic | PLCC | 32 | 0°C | 70°C | 74 K |
V29C51001T-45P | 1megabit (131,072 x 8bit) 5V CMOS flash memory | Mosel-Vitelic | PDIP | 32 | 0°C | 70°C | 74 K |
V29C51001T-45T | 1megabit (131,072 x 8bit) 5V CMOS flash memory | Mosel-Vitelic | TSOP | 32 | 0°C | 70°C | 74 K |
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