Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M48T12-120PC1 | CMOS 2K x 8 timekeeper SRAM, 120ns | SGS-Thomson-Microelectronics | PCDIP | 24 | 0°C | 70°C | 503 K |
PP100T120 | 1200V, 100A 3 Phase POW-R-PAK power IGBT assembly | distributor | - | - | - | - | 361 K |
PP150T120 | 1200V, 150A 3 Phase POW-R-PAK power IGBT assembly | distributor | - | - | - | - | 362 K |
PP150T120-02 | 1200V, 150A 3 Phase POW-R-PAK power IGBT assembly | distributor | - | - | - | - | 347 K |
PP150T120-08 | 1200V, 150A 3 Phase POW-R-PAK power IGBT assembly | distributor | - | - | - | - | 391 K |
PP200T120 | 1200V, 200A 3 Phase POW-R-PAK power IGBT assembly | distributor | - | - | - | - | 362 K |
SL74HCT125D | Quad 3-state noninverting buffer. High-performance silicon-gate CMOS. | distributor | SOIC | 14 | -55°C | 125°C | 45 K |
SL74HCT125N | Quad 3-state noninverting buffer. High-performance silicon-gate CMOS. | distributor | DIP | 14 | -55°C | 125°C | 45 K |
SL74HCT126D | Quad 3-state noninverting buffer. High-performance silicon-gate CMOS. | distributor | SOIC | 14 | -55°C | 125°C | 44 K |
SL74HCT126N | Quad 3-state noninverting buffer. High-performance silicon-gate CMOS. | distributor | DIP | 14 | -55°C | 125°C | 44 K |
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