| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MMFT3055E | Medium power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 238 K |
| MMFT3055EL | Medium power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 236 K |
| MMFT3055V | SOT-223 for surface mount | Motorola | - | 4 | -55°C | 150°C | 91 K |
| MMFT3055VL | SOT-223 for surface mount | Motorola | - | 4 | -55°C | 150°C | 224 K |
| UFT30-28 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 19 K |
| UFT30-28S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| UT3020 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_(WT) | - | - | - | 139 K |
| UT3040 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_(WT) | - | - | - | 139 K |
| UT3060 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_(WT) | - | - | - | 139 K |
| VFT300-28 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 24 K |
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