Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CET3055 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 487 K |
CET3055L | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 494 K |
CT30SM-12 | 30A insulated gate bipolar transistor for general inverter ups use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 36 K |
CT30TM-8 | 180A insulated gate bipolar transistor for strobe flasher use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 25 K |
CT30VM-8 | 180A insulated gate bipolar transistor for strobe flasher use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 24 K |
RE5VT30AA-RF | Low voltage detector. Detector threshold 3.0V. Output type Nch open drain. Taping type RF | distributor | - | 3 | -30°C | 80°C | 324 K |
RE5VT30AA-RR | Low voltage detector. Detector threshold 3.0V. Output type Nch open drain. Taping type RR | distributor | - | 3 | -30°C | 80°C | 324 K |
RE5VT30AA-TZ | Low voltage detector. Detector threshold 3.0V. Output type Nch open drain. Standard taping type TZ | distributor | - | 3 | -30°C | 80°C | 324 K |
VFT30-50 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
VFT300-50 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 20 K |
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