| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXDT30N120 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 86 K |
| IXDT30N120D1 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 86 K |
| IXFT30N40Q | 400V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 105 K |
| IXFT30N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 110 K |
| IXFT30N50Q | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 110 K |
| IXGT30N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 53 K |
| IXGT30N60BD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 114 K |
| IXST30N60BD1 | 600V high speed IGBT with diode | distributor | - | 3 | -55°C | 150°C | 119 K |
| IXST30N60C | 600V high speed IGBT | distributor | - | 3 | -55°C | 150°C | 131 K |
| IXST30N60CD1 | 600V high speed IGBT with diode | distributor | - | 3 | -55°C | 150°C | 72 K |
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