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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
RE5VT39CCLow voltage detector. Detector threshold 3.9V. Output type CMOS. Antistatic bagdistributor-3-30°C80°C324 K
RH5VT39ACLow voltage detector. Detector threshold 3.9V. Output type Nch open drain. Antistatic bagdistributor-3-30°C80°C324 K
RH5VT39CCLow voltage detector. Detector threshold 3.9V. Output type CMOS. Antistatic bagdistributor-3-30°C80°C324 K
RN5RT39AA-TLLow dropout voltage regulator. Output voltage 3.9V. Taping type TLdistributor-5-40°C85°C89 K
RN5RT39AA-TLLow dropout voltage regulator. Output voltage 3.9V. Taping type TLdistributor-5-40°C85°C89 K
RN5VT39ACLow voltage detector. Detector threshold 3.9V. Output type Nch open drain. Antistatic bagdistributor-5-30°C80°C324 K
RN5VT39CCLow voltage detector. Detector threshold 3.9V. Output type CMOS. Antistatic bagdistributor-5-30°C80°C324 K
SST39LF200A-45-4C-EK2 Mbit multi-purpose flashSilicon-Storage-Technology-Inc-TSOP480°C70°C340 K
WMBT3904NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--66 K
WMBT3906PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--66 K
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