Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
AAT4900IGV-T1 | Buffered power half-bridge | distributor | SOT23 | 5 | -40°C | 85°C | 191 K |
DAT49064 | 2500MHz 4 section attenuator | distributor | - | 6 | -55°C | 85°C | 24 K |
FZT491 | NPN silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 41 K |
FZT491 | NPN silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 41 K |
FZT493 | NPN silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 41 K |
MP04HBT490-24 | 2400V dual thyristor, thyristor/diode module | distributor | MP04 | 3 | - | - | 202 K |
MP04HBT490-26 | 2600V dual thyristor, thyristor/diode module | distributor | MP04 | 3 | - | - | 202 K |
MP04HBT490-28 | 2800V dual thyristor, thyristor/diode module | distributor | MP04 | 3 | - | - | 202 K |
MT49H8M32FM-33 | 1Meg x 32 x 8 banks, DRAM | distributor | FBGA | 144 | 0°C | 70°C | 652 K |
MT49H8M32FM-4 | 1Meg x 32 x 8 banks, DRAM | distributor | FBGA | 144 | 0°C | 70°C | 652 K |
MT49H8M32FM-5 | 1Meg x 32 x 8 banks, DRAM | distributor | FBGA | 144 | 0°C | 70°C | 652 K |
<< [143] [144] [145] [146] [147] 148 [149] [150] [151] [152] [153] >> |
---|