| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BZT52C6V2 | Pd=410mW, Vz=6.2V zener diode | distributor | - | - | - | - | 407 K |
| BZT52C7V5 | Pd=410mW, Vz=7.5V zener diode | distributor | - | - | - | - | 407 K |
| BZT52C7V5 | Pd=410mW, Vz=7.5V zener diode | distributor | - | - | - | - | 407 K |
| BZT52C8V2 | Pd=410mW, Vz=8.2V zener diode | distributor | - | - | - | - | 407 K |
| BZT52C9V1 | Pd=410mW, Vz=9.1V zener diode | distributor | - | - | - | - | 407 K |
| MCT5200 | HIGH-PERFORMANCE AlGaAs PHOTOTRANSISTOR OPTOCUPLERS | Fairchild-Semiconductor | - | - | - | - | 169 K |
| MCT5201 | HIGH-PERFORMANCE AlGaAs PHOTOTRANSISTOR OPTOCUPLERS | Fairchild-Semiconductor | - | - | - | - | 169 K |
| MCT5210 | HIGH-PERFORMANCE AlGaAs PHOTOTRANSISTOR OPTOCUPLERS | Fairchild-Semiconductor | - | - | - | - | 169 K |
| MCT5211 | HIGH-PERFORMANCE AlGaAs PHOTOTRANSISTOR OPTOCUPLERS | Fairchild-Semiconductor | - | - | - | - | 169 K |
| MMBT5210 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | - | - | - | 90 K |
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