Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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G950T55D | 2.5 V, 1A regulator | distributor | TO263 | 3 | -40°C | 85°C | 207 K |
G950T55T | 2.5 V, 1A regulator | distributor | TO263 | 3 | -40°C | 85°C | 207 K |
G950T55U | 2.5 V, 1A regulator | distributor | TO263 | 3 | -40°C | 85°C | 207 K |
HMBT5551 | Emitter to base voltage:6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage | distributor | - | 3 | - | - | 31 K |
MMBT5550LT1 | 140 V, high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
MMBT5551 | 180V; 200mA NPN small signal surface mount transistor. Ideal for medium power application and switching | distributor | - | 3 | -55°C | 150°C | 47 K |
MMBT5551 | 180 V, NPN small signal surface mount transistor | distributor | - | 3 | -55°C | 150°C | 170 K |
MMBT5551LT1 | 140 V, high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
MMDT5551 | 180V; 200mA dual NPN small signal surface mount transistor. Ideal for medium power amplification and switching | distributor | - | 6 | -55°C | 150°C | 41 K |
MMST5551 | 180V; 200mA NPN small signal surface mount transistor. Ideal for medium power amplification and switching | distributor | - | 6 | -55°C | 150°C | 41 K |
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