| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DTB143EC | 50 V, digital transistor | distributor | - | 3 | - | - | 77 K |
| DTB143EK | 50 V, digital transistor | distributor | - | 3 | - | - | 77 K |
| K6T4008U1C-TB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| TB1100H | 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 184 K |
| TB1100L | 90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB1300L | 120V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB1500L | 140V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB1500M | Rated repetitive off-state voltage:140 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
| TB1800L | 160V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB1800M | Rated repetitive off-state voltage:160 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
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