| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KTB1151 | PNP transistor for low collector saturation voltage large current applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 383 K |
| KTB1241 | PNP transistor for general purpose applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 270 K |
| KTB1260 | PNP transistor for general purpose applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 119 K |
| STB10NC50-1 | N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 55 K |
| STB11NB40 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 102 K |
| STB12NM50-1 | N-CHANNEL 500V 0.3OHM 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
| STB15N25 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| STB16NB25 | N-CHANNEL 250V - 0.220 OHM - 16A - TO-263 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| STB18N20 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 126 K |
| STB19NB20 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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