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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB20N20ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C258 K
MTB23P06ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C280 K
MTB2N40ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C271 K
MTB2N60ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C271 K
MTB2P50ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C273 K
PTB2009740 watts, 915-960 MHz cellular radio RF power transistorEricsson-Microelectronics202003--47 K
PTB20101175 watts P-sync, 470-860 MHz UHF TV power transistorEricsson-Microelectronics202245--44 K
PTB2010520 watts, 925-960 MHz cellular radio RF power transistorEricsson-Microelectronics202013--45 K
PTB2011185 watts, 860-900 MHz cellular radio RF power transistorEricsson-Microelectronics202163--47 K
PTB20125100 watts, 1.8-2.0 GHz PCN/PCS power transistorEricsson-Microelectronics202255--235 K
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