Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTB20N20E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 258 K |
MTB23P06E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 280 K |
MTB2N40E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 271 K |
MTB2N60E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 271 K |
MTB2P50E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 273 K |
PTB20097 | 40 watts, 915-960 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20200 | 3 | - | - | 47 K |
PTB20101 | 175 watts P-sync, 470-860 MHz UHF TV power transistor | Ericsson-Microelectronics | 20224 | 5 | - | - | 44 K |
PTB20105 | 20 watts, 925-960 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20201 | 3 | - | - | 45 K |
PTB20111 | 85 watts, 860-900 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20216 | 3 | - | - | 47 K |
PTB20125 | 100 watts, 1.8-2.0 GHz PCN/PCS power transistor | Ericsson-Microelectronics | 20225 | 5 | - | - | 235 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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