| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB23P06E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 280 K |
| MTB23P06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 249 K |
| PTB23006U | Microwave power transistor | Philips-Semiconductors | SOT440 | - | - | - | 88 K |
| PTB23006U | 40 V, microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 75 K |
| TB2300H | 190V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 184 K |
| TB2300H | Rated repetitive off-state voltage:190 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 46 K |
| TB2300L | 190V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB2300L | Rated repetitive off-state voltage:190 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
| TB2300M | 190V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
| TB2300M | Rated repetitive off-state voltage:190 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
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