| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB30N06VL | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 262 K |
| MTB30P06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 247 K |
| MTB30P06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 247 K |
| MTB36N06E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 278 K |
| MTB36N06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 241 K |
| MTB3N100E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| MTB3N120E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 322 K |
| MTB3N120E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 322 K |
| MTB3N60E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 74 K |
| UPTB33 | Transient Voltage Suppressor | Microsemi-Corporation | POWERMITE | - | - | - | 156 K |
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