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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB33N10ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C266 K
TB3100HRated repetitive off-state voltage:275 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C46 K
TB3100LRated repetitive off-state voltage:275 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C47 K
TB3100LRated repetitive off-state voltage:275 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C47 K
TB3100LRated repetitive off-state voltage:275 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C47 K
TB3100MRated repetitive off-state voltage:275 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C47 K
TB3500HRated repetitive off-state voltage:320 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C46 K
TB3500LRated repetitive off-state voltage:320 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C47 K
TB3500MRated repetitive off-state voltage:320 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C47 K
ZTB320D320KHz, 4-bit single chip microcomputerdistributor---20°C70°C328 K
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