| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K6T0808C1D-TB70 | 70ns, 32Kx8 bit low low power CMOS static RAM | Samsung-Electronic | TSOP1F | 28 | 0°C | 70°C | 170 K |
| K6T1008C2E-TB70 | 128Kx8 bit, 70ns low low power CMOS static RAM | Samsung-Electronic | TSOP | 32 | 0°C | 70°C | 190 K |
| K6T4008U1C-TB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| K6T4008V1C-TB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
| KTB764 | General Purpose Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 80 K |
| MTB75N03HDL | HDTMOS E-FET high density power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 304 K |
| MTB75N05HD | HDTMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 254 K |
| MTB75N06HD | HDTMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 342 K |
| STB7001 | 900 MHZ THREE GAIN LEVEL LNA | SGS-Thomson-Microelectronics | - | - | - | - | 331 K |
| STB7002 | 1.8 GHZ THREE GAIN LEVEL LNA | SGS-Thomson-Microelectronics | - | - | - | - | 369 K |
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