| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 29C010TC-1 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. | distributor | TSOP | 32 | 0°C | 70°C | 52 K |
| 29C021TC-1 | High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. | distributor | TSOP | 32 | 0°C | 70°C | 54 K |
| HY57V651620BLTC-10 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| HY57V651620BLTC-10P | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| HY57V651620BLTC-10S | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| HY57V651620BTC-10 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| HY57V651620BTC-10P | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| HY57V651620BTC-10S | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| MX28F2000PTC-12C4 | 2M-BIT (256K x 8) CMOS flash memory, 120ns | distributor | TSOP | 32 | 0°C | 70°C | 191 K |
| MX28F2100BTC-12 | 2M-BIT (256K x 8/128K x 16 switchable) CMOS flash memory, 120ns | distributor | TSOP | 48 | 0°C | 70°C | 283 K |
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