Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HY57V161610DTC-10 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 100 MHz | distributor | TSOP II | 50 | 0°C | 70°C | 130 K |
HY57V161610DTC-10I | 2 banks x 524,288 x 16 synchronous DRAM, LVTTL interface, 100 MHz | distributor | TSOP II | 50 | -40°C | 85°C | 73 K |
HY57V651620BLTC-10 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
HY57V651620BLTC-10P | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
HY57V651620BLTC-10S | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
HY57V651620BTC-10 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
HY57V651620BTC-10P | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
HY57V651620BTC-10S | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
MX29L1611TC-10 | Access time: 100ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage pagemode flash EEPROM | distributor | TSOP | 48 | 0°C | 70°C | 659 K |
MX29L3211TC-10 | Access time: 100ns; 32M-bit (4M x 8/2M x 16) CMOS single voltage pagemode flash EEPROM | distributor | TSOP | 48 | 0°C | 70°C | 659 K |
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